摘要 |
Directionally solidified polycrystalline silicon, with an arsenic and/or antimony content of 10<13>-10<17> atoms/cm<3>, is new. Preferably, the silicon also has an oxygen content of 10<16>-2/*10<18> atoms/cm<3>, a resistivity of 100-10000 milli-ohm.cm and a minority charge carrier free diffusion path length of /-10 mu . Also claimed is production of the above polycrystalline silicon by subjecting single crystal or polycrystalline As- and/or Sb-containing silicon to melting and then directional solidification. Further claimed are solar cells, containing the above directionally solidified polycrystalline silicon, and a process for producing such solar cells.
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申请人 |
BAYER AG, 51373 LEVERKUSEN, DE |
发明人 |
WODITSCH, PETER, PROF. DIPL.-CHEM. DR., 47800 KREFELD, DE;HAESLER, CHRISTIAN, DIPL.-PHYS. DR., 47800 KREFELD, DE;KRUMBE, WOLFGANG, DIPL.-MIN. DR., 42799 LEICHLINGEN, DE;LANGE, HORST, DIPL.-CHEM. DR., 44879 BOCHUM, DE |