THIN FILM PIEZOELECTRIC ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND CIRCUIT ELEMENT

摘要

Thin film piezoelectric elements (12a, 12b, and 12c) formed on a wafer (11) and having the same characteristics irrespective of the position on the wafer (11) is realized by compensating the variation of the characteristics depending on the positions of the elements (12a, 12b, and 12c) by changing at least one of the lengths Le and widths We of upper electrodes (18a and 18b), the distance Lg between upper input and output electrodes (18a and 18b), the lengths La and widths Wa of lead-out electrodes (19a and 19b), and the pattern shapes of the elements (12a, 12b, and 12c), such as the electrode areas of the capacitors electrically connected to bonding pads (20a and 20b).