Diodenlaser-Oszillator oder- Verstärker mit wenigstens einer lichtleitenden Halbleiterschicht

摘要

The invention relates to a diode laser oscillator or amplifier having at least one light conducting semiconductor layer. The refractive index of said layer is greater than that of semiconductor layers which surround the light conducting semiconductor layer and form an optical waveguide structure with it. This semiconductor layer has at least one optically active zone inside which stimulated photon emission occurs, and which has an optical filling factor which describes the light proportion, present inside the optically active zone, of an optical wave guided into the optical waveguide structure. The invention is characterized in that the light conducting semiconductor layer is so configured that the optical filling factor is reduced and/or the refractive index of the light-conducting semiconductor layer and the refractive index of the semiconductor layers surrounding the light conducting semiconductor layers are selected in such a way that the optical filling factor is reduced.