Verfahren zum Herstellen eines GaAs-Mesfets mit erhöhter Schottkysperrschicht,申请号DE1992627069-传众专利搜索

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发明名称	Verfahren zum Herstellen eines GaAs-Mesfets mit erhöhter Schottkysperrschicht
摘要
申请公布号	DE69227069(D1)	申请公布日期	1998.10.29
申请号	DE1992627069	申请日期	1992.05.29
申请人	AT & T CORP., NEW YORK, N.Y., US	发明人	EMERSON, ADRIAN BRUCE, PISCATAWAY, NEW JERSEY 08854, US;REN, FAN, WARREN, NEW JERSEY 07059, US
分类号	H01L29/812;H01L21/285;H01L21/306;H01L21/338;(IPC1-7):H01L21/28	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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