发明名称 Apparatus and process for remote microwave plasma generation
摘要 <p>An apparatus and methods for a CVD system incorporates a plasma system for efficiently generating a plasma remotely from a substrate processing zone. The remotely generated plasma may be used to clean unwanted deposits from a chamber, or may be used during substrate processing for etching or depositing processes. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source mounted on the lid of a deposition system. The remote microwave plasma source has a plasma reaction volume that is relatively large compared to a plasma applicator tube volume. Locating the gas inlet between the plasma reaction volume and a microwave power coupler improves the conversion efficiency of microwave energy to ionic plasma species. &lt;IMAGE&gt;</p>
申请公布号 EP0874386(A2) 申请公布日期 1998.10.28
申请号 EP19980107040 申请日期 1998.04.17
申请人 APPLIED MATERIALS, INC. 发明人 BKATNAGAR, YASHRAJ K.
分类号 H05H1/46;H01J37/32;H01L21/31;(IPC1-7):H01J37/32 主分类号 H05H1/46
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