发明名称 |
GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
摘要 |
A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density. <IMAGE> |
申请公布号 |
EP0874405(A2) |
申请公布日期 |
1998.10.28 |
申请号 |
EP19980105090 |
申请日期 |
1998.03.20 |
申请人 |
MITSUBISHI CABLE INDUSTRIES, LTD. |
发明人 |
KAZUYUKI, TADATOMO;OKAGAWA, HIROAKI;OHUCHI, YOUICHIRO;MIYASHITA, KEIJI;HIRAMATSU, KAZUMASA;SAWAKI, NOBUHIKO;YAHASHI, KATSUNORI;SHIBATA, TAKUMI |
分类号 |
H01L21/20;H01L33/00;H01L33/02;H01L33/32;H01S5/02;H01S5/323;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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