| 摘要 |
<p>A semiconductor device production process involves (a) forming steps with parallel top faces and perpendicular edges in a semiconductor substrate (1); (b) epitaxially growing a stack of pairs of confinement (5-i) and active (6-i) semiconductor layers, the forbidden band energies of the active layers being different in the respective pairs; (c) planarising the stack for forming an upper surface parallel to the step top faces and for creating parallel zones (8-i) of different effective optical index above respective step top faces; (d) epitaxially growing a final p-type confinement semiconductor layer (9); (e) forming a diffraction grating (preferably a Bragg grating,10) of selected pitch parallel to the step edges within the final confinement layer (9) at least in part of a first selected zone (8-1) such that this zone part has a laser action at a wavelength which is a function of its effective optical index; and (f) depositing one or more propagation lines (11-i) extending perpendicularly to the diffraction grating at least above the selected zone part.</p> |
