发明名称 Sense amplifier control of a memory device
摘要 <p>A test mode of a memory device may be invoked that varies the sense amplifier clocking of the memory device as a function of manipulation of a control signal external to the memory device. At the appropriate logic state of a test mode enable signal, the test mode of the memory device is entered. Normal clocking of the sense amplifier is suspended during the test mode and the sense amplifier is clocked according to the transition of an external control signal from a first logic state to a second logic state. A predetermined period of time after the transition of the external control signal, the sense amplifier if clocked. <IMAGE></p>
申请公布号 EP0874370(A1) 申请公布日期 1998.10.28
申请号 EP19980303111 申请日期 1998.04.22
申请人 STMICROELECTRONICS, INC. 发明人 MCCLURE, DAVID CHARLES
分类号 G01R31/28;G11C11/4076;G11C11/419;G11C29/02;G11C29/12;G11C29/46;G11C29/50;(IPC1-7):G11C29/00;G11C11/407 主分类号 G01R31/28
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