| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor which restricts an adhesion of dust on the surface of a semiconductor wafer in a semiconductor fabrication device. SOLUTION: A low pressure CVD device 1 is provided with a gate valve 8 which is disposed between a process chamber 11 and a load lock chamber 17. The reduced pressure CVD device 1 is further provided with a bypass pipe 50 which is disposed between the process chamber 11 and the load lock chamber 17 and is in parallel with the gate valve 8, and a flow rate regulator valve 51 mounted on the midst of the bypass pipe 50. By allowing gas to pass through the bypass pipe 50, the gas pressure difference between two chambers is made almost zero. Thereafter, the gate valve 8 is opened to provide the movement of a wafer boat 30 on which semiconductor wafers 10 are mounted. Due to such a provision, the fabrication yield of semiconductor devices can be enhanced. |
