| 摘要 |
A memory device with a sense amplifier enable line having the same resistance and capacitance as a local wordline. The sense amplifier enable line is made out of the same material, has the same layout, and has the same load placed on as a local wordline, this will make the sense amplifier enable line have the same resistance, capacitance, and load characteristics as a local wordline. The load on the sense amplifier enable line is a combination of the sense amplifier enable line operational circuitry and sense amplifier enable line load circuit.
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