发明名称 |
Semiconductor device having a contact hole |
摘要 |
A semiconductor device appropriate for increased integrity in which occurrence of electrical short-circuit between a conductor for connecting a bit line and a semiconductor substrate and a gate electrode is obtained. In this semiconductor device, a first insulation layer, a second insulation layer, and a third insulation layer are formed between a first interconnection layer on the semiconductor substrate and a second interconnection layer. The etching rates of the first insulation layer and the second insulation layer are lower than the etching rate of the third insulation layer.
|
申请公布号 |
US5828096(A) |
申请公布日期 |
1998.10.27 |
申请号 |
US19960726314 |
申请日期 |
1996.10.02 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OHNO, YOSHIKAZU;SHINKAWATA, HIROKI;YOKOI, TAKAHIRO |
分类号 |
H01L21/302;H01L21/3065;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L1/00 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|