| 摘要 |
PROBLEM TO BE SOLVED: To provide a small, high-performance, high-frequency semiconductor device. SOLUTION: A semiconductor device is a combination of a silicon-compound semiconductor laminated substrate having a compound semiconductor layer 2 formed on a silicon crystalline substrate 1, a compound semiconductor active element 10 formed on the compound semiconductor layer 2, a metallic layer 3 formed on the compound semiconductor layer 2 as a grounding electrode, an insulating dielectric layer 4 formed on the metallic layer 3, and a passive element formed as a microwave transmission line circuit of a metallic wiring layer on the dielectric layer 4. The compound semiconductor layer is made of, suitably gallium/arsenic(GaAs) or InP semiconductor. Suitable as the high-frequency device is monolithic microwave integrated circuit(MMIC). |
