| 摘要 |
A method for manufacturing a field emission device includes forming a cathode on a substrate. A semiconductor material layer is formed on the cathode and a mask is formed on the semiconductor material layer. The semiconductor material layer is etched to form tips on the cathode. Each of the tips has an upper portion and a lower portion. An insulating material is deposited on the cathode to form an insulating layer. A first metal is deposited on the insulating layer in a slanted angle direction to form a gate electrode having a protruded edge portion. The mask and the tips are removed to form holes. A second metal is deposited on the gate electrode to form micro-tips in the holes. The second metal is then removed from the gate electrode. The upper portion of the tips may have a cone shape, while the lower portion of the tips may have a column shape. The upper and lower portions of the tips may be formed by two different etching methods. The resulting field emission device may be applied, among other things, to a flat plate display device, an extremely high frequency amplifier, and a sensor. According to the above method, the gate is precisely formed to have an aperture whose size is minute and uniform, thereby lowering a voltage for driving the display.
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