发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To improve detection precision, to reduce cost and to reduce current consumption by controlling the voltage drop of high voltage in a high voltage drop part, switch-controlling reference voltage by means of a reference voltage switch part and setting a high voltage value detected in the high voltage detection part. SOLUTION: A control circuit 9 changes drop voltage Vd by changing the number of nMOS transistors in nMOS transistors Ta1-Tan. Then, it controls the reference voltage switch circuit 8 and changes reference voltage Vref inputted to a differential amplifier circuit 2. Thus, the high voltage Vh value detected in the high voltage detection circuit 1 is finely adjusted. Namely, drop voltage Vd inputted to the differential amplifier circuit 2 from the high voltage drop circuit 6 can be changed and reference voltage Vref inputted to the differential amplifier circuit 2 can be changed. Thus, the value of high voltage Vh which can be detected can finely be adjusted.</p>
申请公布号 JPH10289023(A) 申请公布日期 1998.10.27
申请号 JP19970093598 申请日期 1997.04.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 WADA TOMOHISA;MIHARA MASAAKI;TATEWAKI YASUHIKO;MIYAWAKI YOSHIKAZU;DOSAKA KATSUMI
分类号 G11C16/06;G05F1/56;G05F3/24;G11C5/14;G11C11/407;(IPC1-7):G05F1/56 主分类号 G11C16/06
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