| 摘要 |
PROBLEM TO BE SOLVED: To enable an electronic device of high quality to be formed on an insulator board by a method wherein an amorphous silicon thin film is so worked prior to linear pulse laser irradiation as to be possessed of interior angles which include at least a specific angle, and then the amorphous silicon thin film is irradiated with a linear pulse layer beam at a specific angle. SOLUTION: Prior to linear pulse laser irradiation, an amorphous silicon thin film is so worked as to have at least an interior angleθsmaller than 180 deg., and the amorphous silicon thin film is irradiated with a linear pulse laser beam making the laser beam cross the bisector of the interior angleθat an angleϕ, wherein the angleϕis so set as to satisfy a formula,θ/2<ϕ<180 deg.-θ/2. The irradiation spot of a linear pulse laser beam is moved every pulse or pulses to crystallize the amorphous silicon thin film. A travel of an irradiation spot is set shorter than the average nucleus growth distance of a silicon crystalline particle 32 which is left unmelted, whereby crystalline particles other than the crystalline particle 32 are surely restrained from occurring after a process 111.
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