发明名称 |
Semiconductor light emitting device with a Mg superlattice structure |
摘要 |
A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
|
申请公布号 |
US5828086(A) |
申请公布日期 |
1998.10.27 |
申请号 |
US19970826108 |
申请日期 |
1997.03.24 |
申请人 |
SONY CORPORATION |
发明人 |
ISHIBASHI, AKIRA;MATSUMOTO, SATOSHI;NAGAI, MASAHARU;ITO, SATOSHI;TOMIYA, SHIGETAKA;NAKANO, KAZUSHI;MORITA, ETSUO |
分类号 |
H01L33/06;H01L33/28;H01S5/30;H01S5/32;H01S5/347;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|