| 摘要 |
A static RAM cell having first and second differentially connected lines reads binary information stored in the cell by providing a current through the cell and the first line to read a binary "1" or through the cell and the second line to read a binary "0". First and second transistors in a pre-amplifier respectively connected in the first and second lines provide outputs respectively representing a binary "1" and a binary "0". The first and second transistors pass control currents respectively through third and fourth transistors to produce bias currents in one of the first and second transistors when reading currents are not passing through that transistor and the cell. The control of the third and fourth transistors increases the frequency at which information is read from the cell and is amplified. In this improvement, the bias current in the line providing an output at each instant is reduced by respectively providing a negative feedback from the outputs (e.g. the drains) of the first and second transistors to control the inputs (e.g. the gates) of the third and fourth transistors. This reduces power losses while increasing the frequency at which binary information is read from the cell. The frequency may be further increased by including an impedance in the control circuitry to the third and fourth transistors to delay the response of the third and fourth transistors. Pairs of pre-amplifiers for different bit and word lines may be connected in parallel to provide further increases in the frequency response and further power losses.
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