| 摘要 |
PROBLEM TO BE SOLVED: To reduce dust in a dishing-restricted condition for achieving a long service life of a polishing pad and stabilizing a polishing rate by using a dresser which is capable of simultaneously performing dressing of a polishing pad surface deteriorated after polishing a semiconductor wafer in a CMP method, and conditioning of it, and using polishing agent to which polysaccaride is added. SOLUTION: A ceramic dresser using ceramic comprising SiC, SiN, alumina, silica, etc., is used for dressing (b). At least one step is formed on this dresser. With this ceramic dresser, CMP polishing is performed using a foam polyurethan-based polishing pad, and adding additive of polysaccharide to polishing agent. Impurities including the polishing agent choked in pores in the polishing pad can be easily eliminated, and foam film on the surface becoming rough can be eliminated. |
