发明名称 Procédé de fabrication de dispositifs semi-conducteurs
摘要 <p>1,135,059. Semi-conductor circuits. TEXAS INSTRUMENTS Inc. 21 Dec., 1965 [21 Dec., 1964], No. 54124/65. Heading H3T. [Also in Division H1] The invention relates to the construction of an integrated circuit (see Division H1) in which a basic circuit element may consist of a logic circuit as shown in Fig. 2. This comprises two AND gates 27, 28 with emitter follower output transistors 36, 37 (Fig. 3) and input terminals A and G and B and G respectively. The output across common load resistor 40 is connected via an inverter 43 to one input of AND gate 29 which has a second input terminal X, the output being supplied via emitter follower 47 to inverter 31 to provide the output/input G.</p>
申请公布号 FR1460406(A) 申请公布日期 1966.11.25
申请号 FR19650042930 申请日期 1965.12.20
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人
分类号 H01L21/82;H01L21/8222;H01L23/535 主分类号 H01L21/82
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