| 摘要 |
PROBLEM TO BE SOLVED: To enable a bump electrode in high junction strength to be formed on an electrode of a semiconductor substrate causing no damage to the semiconductrate substrate by providing a solder layer on a metallic protrusion junction formed on the electrode formed on the semiconductor substrate. SOLUTION: An aluminum foil 3 is mounted on an aluminum electrode 2 formed on a silicon chip 1 to pass a copper wire 4 through a capillary 5 to form a copper ball 6 by discharge to be pressed upon the aluminum electrode 2 so that the copper ball 6 in held by the aluminum foil 3 may be junctioned with the alumi electrode 2. Later, the copper wire 4 is cut off near the copper ball 6 to release the aluminum foil 3 for the formation of a metallic protrusion 8 on the aluminum electrode 2. Finally, a solder layer 9 is formed by a transfer process to manufacture a bump electrode. In such a constitution, the metallic (aluminum) foil 3 interposed between the electrode of a semiconductor substrate and the metallic protrusion 8 absorbs the impact when the copper ball 6 is pressed upon the electrode so as to avoid the damage to the semiconductor substrate for giving high junction strength. |
