发明名称 Semiconductor laser device and a method of growing a semiconductor laser device
摘要 A semiconductor laser device includes an active region, a cladding region, and a carrier blocking layer of the same conductivity type as the cladding region disposed on tho same side of the active region as the cladding region. The carrier, blocking layer has a greater impurity concentration than the cladding region.
申请公布号 US5828685(A) 申请公布日期 1998.10.27
申请号 US19960773075 申请日期 1996.12.26
申请人 SHARP KABUSHIKI KAISHA 发明人 DUGGAN, GEOFFREY
分类号 H01S5/00;H01S5/20;H01S5/30;H01S5/32;H01S5/343;(IPC1-7):H01S3/19 主分类号 H01S5/00
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