| 发明名称 |
Dual polarization quantum well laser in the 200 to 600 nanometers range |
| 摘要 |
A semiconductor laser source using a strained active layer of an indium gallium aluminum nitride (InxGa1-x-yAlyN) quaternary alloy to obtain semiconductor laser sources that emit TE or TM polarized light in the wavelength range of 200 to 600 nm.
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| 申请公布号 |
US5828684(A) |
申请公布日期 |
1998.10.27 |
| 申请号 |
US19950581711 |
申请日期 |
1995.12.29 |
| 申请人 |
XEROX CORPORATION |
发明人 |
VAN DE WALLE, CHRISTIAN GILBERT |
| 分类号 |
H01S5/34;H01S5/343;(IPC1-7):H01S3/19;H01S3/10 |
主分类号 |
H01S5/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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