Method for forming buried interconnect structue having stability at high temperatures

摘要

A buried interconnect structure which is stable at the high temperatures involved in BiCMOS, bipolar, and CMOS transistor process flows, and a method of making the same. The interconnect structure is fully insulated and can be used to form stable, doped structures suitable for use as electrodes and gate structures in a CMOS process, or to form low resistance contacts to N or P-type silicon as part of a bipolar process. Because the interconnect structure is buried and fully insulated from surrounding structures, it may be used to form complex, multi-level devices having a minimized geometry and increased circuit density.