| 摘要 |
A thin film transistor is fabricated by introducing a dopant into an indium tin oxide layer or a gate insulating layer by an ion shower doping technique. An a-Si semiconductor layer is then deposited on the surface of the substrate and subjected to a single exposure of laser light. The laser exposure or annealing diffuses dopant into the semiconductor layer and activates the dopant to form an ohmic layer of n-type or p-type conductivity polysilicon, and an intrinsic polysilicon layer. A metal layer and an indium tin oxide layer are formed to the side of a gate electrode to maintain an electrical connection even if a break is formed in the data bus line.
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