发明名称 |
Method for forming LDD CMOS using double spacers and large-tilt-angle ion implantation |
摘要 |
A method of forming an integrated circuit device, and in particular a CMOS integrated circuit device, having an improved lightly doped drain region. The methods include the steps of providing a semiconductor substrate with a P type well region and an N type well region. Gate electrodes are formed overlying gate dielectric over each P type well and N type well regions. The present LDD fabrication methods then provide a relatively consistent and easy method to fabricate CMOS LDD regions with N type and P type implants at a combination of different dosages and angles using first and second sidewall spacers, with less masking steps and improved device performance.
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申请公布号 |
US5827747(A) |
申请公布日期 |
1998.10.27 |
申请号 |
US19960623435 |
申请日期 |
1996.03.28 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
WANG, CHIH-HSIEN;CHEN, MIN-LIANG |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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