发明名称 POLISHING LIQUID COMPOSITION
摘要 <p>PROBLEM TO BE SOLVED: To obtain the subject composition, capable of manifesting a high polishing rate while suppressing the damage to a metallic surface such as aluminum, copper or tungsten and useful for chemomechanical polishing of a wafer, etc., by including a specific microcellulose as a polishing agent therein. SOLUTION: This composition contains preferably 0.1-10 wt.% microcellulose, having <=8μm average particle diameter and containing <=40% particles having >=10μm particle diameter (e.g. the one obtained by carrying out the depolymerizing treatment of a cellulosic material such as a wood pulp or a purified linter according to the acid hydrolysis, alkali oxidative decomposition, enzymolysis or steam explosion decomposition, providing a cellulose having 30-375 average polymerization degree, as necessary, performing the purification such as washing with water, then applying a mechanical shear and wet grinding the resultant material).</p>
申请公布号 JPH10287865(A) 申请公布日期 1998.10.27
申请号 JP19970096821 申请日期 1997.04.15
申请人 ASAHI CHEM IND CO LTD 发明人 OTANI TETSUYA;KAMATA ETSUO;FUKUMOTO HIROBUMI
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):C09K3/14 主分类号 B24B37/00
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