| 摘要 |
In a method for simulating parameters including a potential in a semiconductor device, deviations of the parameters are calculated for a plurality of nodes of a mesh in the semiconductor device by Newton's method. However, when absolute values of electric fields are larger than a first value and deviations of the electric fields are larger than a second value, the parameters are renewed by adding values smaller than the deviations of the parameters thereto. Otherwise, the parameters are renewed by adding the deviations of the parameters thereto.
|
