发明名称 |
Multi-step metallization etch |
摘要 |
A method for etching through a selected portion of a metallization layer of a wafer's layer stack in a high density plasma processing chamber includes performing a main etch by etching at least partially through the metallization layer of the layer stack with a main-etch etchant source gas that includes essentially Cl2 and BCl3 having a first Cl2:BCl3 flow ratio. Thereafter, an over etch is performed by etching to a layer underlying the metallization layer with an over-etch etchant source gas that includes essentially Cl2 and BCl3 having a second Cl2:BCl3 flow ratio that is higher than the first Cl2:BCl3 flow ratio. The method may further include the step of performing a barrier layer etching step for etching a barrier layer of the layer stack prior to performing the over etch.
|
申请公布号 |
US5827437(A) |
申请公布日期 |
1998.10.27 |
申请号 |
US19960649268 |
申请日期 |
1996.05.17 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
YANG, RICHARD YEN-CHANG;HUANG, KENLIN CHENJIN |
分类号 |
H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|