发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To realize a power semiconductor device where a copper foil pattern formed on an aluminum nitride ceramic board is restrained from increasing in size by a method wherein a conductor pattern which is not electrically connected is provided around the aluminum nitride ceramic board. SOLUTION: For instance, six diode chips 105 are soldered to an aluminum nitride ceramic board 101. All the rear of the aluminum nitride ceramic board 101 is soldered to a molybdenum base. The largest one of copper foil patterns formed on the upside of the aluminum nitride ceramic board 101 is a cathode copper foil pattern 102. A non-wired pattern stress adjusting copper foil pattern 104 is provided in each of lower lateral corners of the aluminum nitride ceramic board 101. Copper foil patterns are not electrically required to be provided in the lower lateral corners, but they are required to be provided there so as to set the front side of the board 101 in stress balance with the rear side. A design where these patterns are provided in one piece with the cathode copper foil pattern 102 can be adopted.
申请公布号 JPH10289968(A) 申请公布日期 1998.10.27
申请号 JP19970095577 申请日期 1997.04.14
申请人 HITACHI LTD 发明人 INOUE KOICHI;TANAKA AKIRA;KOIKE YOSHIHIKO
分类号 H01L23/13;H05K1/02;H05K1/03;H05K1/05;(IPC1-7):H01L23/13 主分类号 H01L23/13
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