发明名称 |
Method of making NMOS and devices with sequentially formed gates having different gate lengths |
摘要 |
A method of making NMOS and PMOS devices with different gate lengths includes providing a semiconductor substrate with first and second active regions, forming a first gate over a portion of the first active region and a second gate over a portion of the second active region, wherein the first and second gates are formed in sequence and have different lengths, and forming a source and drain in the first active region and a source and drain in the second active region. Preferably, the first gate is defined by a first photoresist layer patterned with a first exposure time, the second gate is defined by a second photoresist layer patterned with a second exposure time, and the difference in gate lengths is due primarily to a difference between the first and second exposure times.
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申请公布号 |
US5827761(A) |
申请公布日期 |
1998.10.27 |
申请号 |
US19970805537 |
申请日期 |
1997.02.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FULFORD, JR., H. JIM;DAWSON, ROBERT;GARDNER, MARK I.;HAUSE, FREDERICK N.;MICHAEL, MARK W.;MOORE, BRADLEY T.;WRISTERS, DERICK J. |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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