| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetostatic wave device which can exhibit stable properties at a frequency of about 1 GHz or less. SOLUTION: A magnetostatic wave device includes a single-crystal substrate formed by cutting a single-crystal ingot having a composition formula Gd3 Ga5 O12 in the 111} plane orientation and polishing it, and a magnetic garnet single- crystal film which is formed by epitaxial growth on the single-crystal substrate and has a composition formula (YR1)3 (FeR2)5 O12 (It is principally composed of Y and Fe. R1 in the formula is at least one element selected from among La, Bi, Lu and Gd. R2 is at least one element selected from among Ga, Al, In and Sc). Magnetostatic surface wave is propagated in the axial <110> axis direction existing in the plane of the 111} crystal plane orientation. |
