METHOD OF DEPOSITING LOW-DIELECTRIC CONST. SILICON-OXYGEN-FLUORINE FILM, USING SILICON TETRAFLUORIDE/OXYGEN CHEMICAL ACTION

摘要

PROBLEM TO BE SOLVED: To provide a method of depositing a low permittivity Si-O-F film on a substrate. SOLUTION: In a vacuum chamber 10 dissociated SiF4 radicals are thermally reacted with ozone or oxygen to deposit a low permittivity Si-O-F film on a substrate. The SiF4 radical is formed at a remote position 56 from the chamber 10 and can be thermally reacted with ozone or oxygen, without reinforcing the plasma. The deposited Si-O-F film has good gap filling characteristic and is suited to form an IMD layer on a 0.25μm geometric shape with high aspect ratio.