| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which prevents the short circuit between the MOS transistors of neighboring memory cells and obtains a semiconductor device having high electric reliability. SOLUTION: Epitaxial silicon layers 12a and 12c are formed on two neighboring MOS transistor n<+> source/drain regions 9b and 9c, formed on a silicon substrate 1. At this time, polysilicon pieces are formed on an element-separating insulation film 2 and the like. Thereafter, the silicon and the oxygen on the surfaces of the epitaxial silicon layers 12a and 12b and the surface of the polysilicon pieces are made to react, respectively, by exposing the silicon substrate 1 to oxygen atmosphere. Thus, a silicon oxide film 23 and a polysilicon piece 21a are formed. |
