| 摘要 |
PROBLEM TO BE SOLVED: To enable alignment with high precision without deteriorating performance of a semiconductor device, having groove-type element isolation. SOLUTION: The surfaces of embedded silicon oxide films 2B and 2C embedded in grooves 10B and 10C, respectively in element forming regions (memory cell region 11B and peripheral circuit region 11C) of a semiconductor substrate 1 are formed at substantially the same height which is slightly large than that of the surface of the semiconductor substrate 1. On the other hand, the surface of a silicon oxide film 2A embedded in a groove 10A is formed to sink and lie lower than the surface of the semiconductor substrate 1. |
