| 摘要 |
PROBLEM TO BE SOLVED: To prevent a transistor from being turned on in the state that a potential difference exists at both sides by feeding a low level to a substrate electrode at the high-level output side of a pair of transfer gate transistors on reading, by preventing transistor characteristics from being fumed on even when a gate potential is set to a high level, and by preventing the high-level side of a node from being connected to a bit line. SOLUTION: When storage nodes SB and SBb are set to high and low levels, respectively, the substrate electrodes of transfer gate transistors MBb and MB are set to high and low levels, respectively. Also, when the storage nodes SB and SBb are set to low and high levels, respectively, the substrate electrodes of the transfer gate transistors MBb and MB are set to low and high levels, respectively. Then, a threshold voltage is adjusted so that the transistors MB and MBb are not turned on even when the gate electrode is set to the high level while the substrate electrode is set to the low ground level and at the same time the transistors MB and MBb are fumed on when the gate electrode is set to the high level while the substrate electrode is set to the high level. |
