发明名称 PHOTON INTEGRATED CIRCUIT AND ITS FABRICATION METHOD
摘要 PROBLEM TO BE SOLVED: To make a surface of a photon integrated circuit flat by growing a waveguide stack including a waveguide layer and an active layer on a substrate, forming a waveguide by etching partially, growing blocking layers on an active region and a passive waveguide, forming a trench on the active region and covering the trench by filling a clad layer in the trench. SOLUTION: An epitaxial growth of a primary waveguide stack is made on a substrate 21. A first layer 22 constitutes a passive waveguide layer on which a second passive guide layer 23 is provided. A third layer 23 is an active multi-quantum well layer which forms, a laser active layer and a fourth layer 25 constitutes a protective layer. An active region and a passive region of a photon integrated circuit(PIC) are formed by chemical etching with a mask and blocking regions are formed by a second epitaxial growth. The blocking layers on the active region are selectively removed so as to form a recess and the surface of the PIC is held flat except for this recess. A clad layer 31 is prepared to fill this recess so as to make the surface of the PIC flat.
申请公布号 JPH10284807(A) 申请公布日期 1998.10.23
申请号 JP19980079885 申请日期 1998.03.26
申请人 LUCENT TECHNOL INC 发明人 KOREN UZIEL
分类号 G02B6/13;G02B6/12;H01L21/20;H01S5/00;H01S5/026;(IPC1-7):H01S3/18 主分类号 G02B6/13
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