| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting diode, capable of inhibiting the deterioration of a radiant power output and reliability due to an impurity diffusion into a light-emitting layer. SOLUTION: A second clad layer 18, which has carrier concentration lower than that of a third clad layer 20 and to which a similar impurity (Zn) as the third clad layer 20 is doped, is formed between the third clad layer 20 and an active layer 16. Accordingly, the quantity of the impurity (Zn) which diffuse into the active layer is made lower than the case, when the third clad layer 20 is brought into contact directly with the active layer 16, because a diffusion into the active layer 16 of the impurity (Zn) existing among crystal lattices in the third clad layer 20 is inhibited by the second clad layer 18 which is formed between the third clad layer 20 and the active layer 16, while the carrier concentration in the second clad layer 18 is made lower than that in the third clad layer 20 and the quantity of the impurity (Zn) existing among the lattices in the second clad layer 18 is made smaller than in the third clad layer 20. |
