发明名称 ELECTROPHOTOGRAPHIC PHOTORECEPTOR FOR REVERSING DEVELOPMENT
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of image defects despite of high sensitivity by anodically oxidizing a substrate made of Al having a specified Mg, Fe and Si contents and subjecting the oxidized substrate to pore sealing treatment in a soln. contg. Ni ions. SOLUTION: A substrate made of Al consisting of <=3.0 wt.% Mg, <=0.2 wt.% Fe, <=0.1 wt.% Si and the balance Al with inevitable impurities is anodically oxidized to form an anodic oxide film of 2-15μm thickness on the surface. The oxidized substrate is subjected to pore sealing treatment by immersion in a soln. contg. Ni ions. Nickel acetate or nickel fluoride is preferably used as the Ni ion source. The pore sealing treatment is preferably carried out so that the concn. of Ni in the anodic oxide film is regulated to 0.05-2.0 wt.%. An org. photoconductive layer is then formed on the substrate.
申请公布号 JPH10282703(A) 申请公布日期 1998.10.23
申请号 JP19970085125 申请日期 1997.04.03
申请人 MITSUBISHI CHEM CORP 发明人 SAKATA KATSUJI;KAMAKURA TAKASHI;HIGASHIMATSU HITOSHI;HIRANO HITOAKI
分类号 G03G5/00;C22C21/00;C25D11/04;C25D11/18;G03G5/10;G03G5/14;(IPC1-7):G03G5/10 主分类号 G03G5/00
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