发明名称 |
Semiconductor pressure sensor |
摘要 |
The sensor has a substrate (20). A semiconductor pressure detection element, which has a pressure detector (100) with two terminals (T9,T10), is arranged on the substrate. A small potential difference proportional to a pressure at the sensor is generated between the two terminals. The sensor also has a peripheral circuit (7) to carry out a differential amplification of the small potential difference based on a reference voltage applied to it. The sensor also has a reference voltage setting resistor unit (R1,R2,R13,R14)to set the reference voltage to a predetermined value. A temperature compensation resistor device compensates for an error in the pressure detector due to a temperature change and may also compensate for an error in the peripheral circuit caused by a change in the reference voltage resulting from the temperature change.
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申请公布号 |
DE19743216(A1) |
申请公布日期 |
1998.10.22 |
申请号 |
DE19971043216 |
申请日期 |
1997.09.30 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
TAKEUCHI, TAKANOBU, TOKIO/TOKYO, JP |
分类号 |
G01L1/18;G01L1/22;G01L9/06;H01L29/84;(IPC1-7):G01L9/06;G01L19/04 |
主分类号 |
G01L1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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