发明名称 Semiconductor pressure sensor
摘要 The sensor has a substrate (20). A semiconductor pressure detection element, which has a pressure detector (100) with two terminals (T9,T10), is arranged on the substrate. A small potential difference proportional to a pressure at the sensor is generated between the two terminals. The sensor also has a peripheral circuit (7) to carry out a differential amplification of the small potential difference based on a reference voltage applied to it. The sensor also has a reference voltage setting resistor unit (R1,R2,R13,R14)to set the reference voltage to a predetermined value. A temperature compensation resistor device compensates for an error in the pressure detector due to a temperature change and may also compensate for an error in the peripheral circuit caused by a change in the reference voltage resulting from the temperature change.
申请公布号 DE19743216(A1) 申请公布日期 1998.10.22
申请号 DE19971043216 申请日期 1997.09.30
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 TAKEUCHI, TAKANOBU, TOKIO/TOKYO, JP
分类号 G01L1/18;G01L1/22;G01L9/06;H01L29/84;(IPC1-7):G01L9/06;G01L19/04 主分类号 G01L1/18
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