| 摘要 |
A method is disclosed for recovering surface-ready silicon carbide substrates from heteroepitaxial structures of Group III nitrides on silicon carbide substrates. The method comprises subjecting a Group III nitride epitaxial layer on a silicon carbide substrate to a stress that sufficiently increases the number of dislocations in the epitaxial layer to make the epitaxial layer subject to attack and dissolution in a mineral acid, but that otherwise does not affect the silicon carbide substrate, and threafter contacting the epitaxial layer with a mineral acid to remove the Group III nitride while leaving the silicon carbide substrate unaffected.
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