| 摘要 |
<p>PURPOSE:To provide the process for production of the low-reflection MoSi photomask improved in such a manner that foreign matter defects are decreased to zero. CONSTITUTION:An MoSi film 3 is formed on a substrate 1. An MoS oxide film 4 is formed on the MoSi film 3. A resist 6 having 1 to 2 selection ratio with the MoSi film 3 is applied by reactive ion etching using gaseous CF3+O2 on the MoSi oxide film 4. The resist 6 is patterned. The MoSi oxide film 4 and the MoSi film 3 are etched by using the gaseous CF3+O2 with the patterned resist 6 as a mask.</p> |
