发明名称 SENSE AMPLIFIER FOR LOW READ-VOLTAGE MEMORY CELLS
摘要 A sense amplifier (10) for comparing the resistance of a reference cell (45) to a resistance of a data cell. The amplifier includes a first terminal for connecting the sense amplifier to the reference bit line (31) and a second terminal for connecting the sense amplifier to the data bit line (32, 33). A reference current to voltage amplifier (50) is connected to the first terminal for generating a reference voltage related to the current flowing through the reference bit line. A data current to voltage amplifier (51, 52) is connected to the second terminal for generating a data voltage related to the current flowing through the data bit line. A comparator compares the reference and data voltages. The data current to voltage amplifier includes an operational amplifier (86) for measuring the difference between a potential on a first conductor and the potential on the data bit line.
申请公布号 WO9847147(A1) 申请公布日期 1998.10.22
申请号 WO1998US06055 申请日期 1998.03.26
申请人 RADIANT TECHNOLOGIES, INC. 发明人 WOMACK, RICHARD, H.
分类号 G11C7/06;G11C7/14 主分类号 G11C7/06
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