| 摘要 |
A method for removing nitrogen oxides in an exhaust gas, which comprises adding ammonia (NH3) in an amount of 0.5 to 3 times the total amount of the stoichiometric amount with respect to nitrogen monoxide (NO) and the stoichiometric amount with respect to nitrogen dioxide (NO2) to an exhaust gas generated in the chemical vapor deposition process in the preparation of semiconductors and containing dinitrogen monoxide (N2O), nitrogen monoxide, and nitrogen dioxide, and bringing the mixed gas into contact with a noble metal catalyst at a temperature high enough to decompose dinitrogen monoxide, nitrogen monoxide, and nitrogen dioxide. This enables treatment of dinitrogen monoxide (N2O), nitrogen monoxide (NO), and nitrogen dioxide (NO2) in one stage. Further, the above method does not newly produce N2O.
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