MOS TRANSISTOR WITH HIGH DOPING GRADIENT UNDER THE GRID

摘要

The invention concerns an LDD-type MOS transistor comprising under its grid zone a first lightly-doped region (31) followed by a second region with the same type of conductivity with higher doping level with a high doping gradient between the two regions. The interface zone between the two regions contain nitrogen atoms resulting from a nitrogen implantation produced before epitaxy.