Halbleiteranordnung aus drei oder mehr Schichten abwechselnder Leitfähigkeit

摘要

1,071,574. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS-G.m.b.H. May 29, 1964 [June 1, 1963; Sept. 24, 1963], No. 22373/64. Heading H1K. In a semi-conductor device comprising three or more layers of alternate conductivity types, the surface where the PN junctions emerge forms an angle of less than 90 degrees with the junction in the direction of the higher resistivity material. Fig. 4 shows an N-type silicon wafer with an outer P-type diffused layer which is cut through at lines 13 to expose PN junctions which meet the surface with the required angular conditions; this has the effect of reducing the electric field along the surface under reverse biasing conditions. A similar effect is produced in a PNP body as shown in Fig. 5 by cutting a trough through line 23 and the same arrangement may be used in a PNP wafer with a projecting edge portion (Fig. 7 not shown).