NITRIDE SEMICONDUCTOR GROWTH METHOD, NITRIDE SEMICONDUCTOR SUBSTRATE, AND NITRIDE SEMICONDUCTOR DEVICE

摘要

A method of growing a nitride semiconductor crystal having very few crystal defects and capable of being used as a substrate, comprising the step of forming a first selective growth mask equipped with a plurality of first windows for selectively exposing the surface of a support on the support having a main plane and including different kinds of substrates made of materials different from those of a nitride semiconductor, and the step of growing the nitride semiconductor, by using a gaseous Group III element source and a gaseous nitrogen source, until portions of the nitride semiconductor crystal growing in adjacent windows from the surface of the support exposed from the window join with one another on the upper surface of the selective growth mask.