Power semiconductors with monolithically integrated test resistor and its fabrication

摘要

A metallic resistive track (AL) is provided in a lateral region between cells (Z1,Z2) of the power semiconductor component to form a measuring rheostat. The metallic resistive track is insulated from the semiconductor body and from a control electrode by a non-conductive layer. Each cell to the left and right of the resistive track is uniformly spaced (A) from the next. A metallic layer (AL1, AL2) contacts a main electrode (E) of the power semiconductor component and is connected at one site to the resistive track.