| 摘要 |
<p>The surface roughness of a sputtering target is controlled and the amount of residual contaminants, the hydrogen content, and the thickness of a surface damage layer are reduced, in order to homogenize the thickness of a film formed on a substrate by sputtering and prevent nodule production and suppress nodule production to reduce particle production during sputtering. A sputtering target with the surface roughness (Ra) not more than 1.0 mu m, the total amount of contaminants, metal elements with a high melting point other than the major component and alloy components, and Si, Al, Co, Ni, and B, not more than 500 ppm, the hydrogen content of the surface not more than 50 ppm, and the thickness of a surface damage layer not more than 50 mu m is provided, which is manufactured by precision machining using a diamond turning tool, if required.</p> |
