发明名称 Generation of electrolytically active water and wet process of a semiconductor substrate
摘要 There is provided a method of, and an apparatus for obtaining electrolytically activated water having stable characteristics comprising steps of bringing a gas containing at least one of chlorine, hydrogen chloride, hydrogen bromide and hydrogen iodide into contact with a liquid in an anode cell of an electrolytic cell or a liquid supplied thereto and/or bringing ammonia into contact with a liquid in a cathode cell of the electrolytic cell, or a liquid supplied thereto to dissolve the gas to thereby electrolyze this liquid. The resulting electrolytically activated water is optimal as the wet treating solution adapted for semiconductor substrate.
申请公布号 US5824200(A) 申请公布日期 1998.10.20
申请号 US19970832199 申请日期 1997.04.08
申请人 NEC CORPORATION 发明人 KITAJIMA, HIROSHI;SHIRAMIZU, YOSHIMI
分类号 H01L21/306;B08B3/08;C02F1/46;C02F1/461;C02F1/467;H01L21/00;H01L21/30;H01L21/304;H01L21/3063;H01L21/308;(IPC1-7):C25B9/00 主分类号 H01L21/306
代理机构 代理人
主权项
地址