发明名称 |
Generation of electrolytically active water and wet process of a semiconductor substrate |
摘要 |
There is provided a method of, and an apparatus for obtaining electrolytically activated water having stable characteristics comprising steps of bringing a gas containing at least one of chlorine, hydrogen chloride, hydrogen bromide and hydrogen iodide into contact with a liquid in an anode cell of an electrolytic cell or a liquid supplied thereto and/or bringing ammonia into contact with a liquid in a cathode cell of the electrolytic cell, or a liquid supplied thereto to dissolve the gas to thereby electrolyze this liquid. The resulting electrolytically activated water is optimal as the wet treating solution adapted for semiconductor substrate.
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申请公布号 |
US5824200(A) |
申请公布日期 |
1998.10.20 |
申请号 |
US19970832199 |
申请日期 |
1997.04.08 |
申请人 |
NEC CORPORATION |
发明人 |
KITAJIMA, HIROSHI;SHIRAMIZU, YOSHIMI |
分类号 |
H01L21/306;B08B3/08;C02F1/46;C02F1/461;C02F1/467;H01L21/00;H01L21/30;H01L21/304;H01L21/3063;H01L21/308;(IPC1-7):C25B9/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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