| 摘要 |
A two-step method of low temperature oxidation of a ferroelectric layer followed by high temperature crystallization of the ferroelectric film to protect underlying semiconductor layers against high temperature oxidation which can cause the conductive layers thereof to become nonconductive. The thus provides a barrier layer on a semiconductor wafer, depositing a ferroelectric layer on the barrier layer, heating the semiconductor wafer at a temperature in a range of about 400 DEG C. to about 700 DEG C. in the presence of oxygen to oxidize the ferroelectric layer, and then heating the semiconductor wafer at a temperature in a range of about 700 DEG C. to about 900 DEG C. in a non-oxidizing ambient to crystallize the oxidized, ferroelectric layer.
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